In situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry
- 15 August 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (4) , 2132-2135
- https://doi.org/10.1063/1.349450
Abstract
We present an in situ study, by spectroellipsometry, of interfaces between amorphous silicon (a‐Si:H) and silicon nitride (a‐SiNx). The nature of the interface between amorphous silicon and silicon nitride depends on the order of deposition. A behavior compatible with an atomically abrupt interface is observed when a‐SiNx is deposited on top of a‐Si:H. On the contrary, a graded transition with a width estimated at ≊15 Å is observed when a‐SiNx is deposited first. An NH3 plasma treatment has little influence on the interface properties. These different behaviors are attributed to the plasma process.This publication has 17 references indexed in Scilit:
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