A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's

1 January 1998

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 114-117
https://doi.org/10.1109/hkedm.1998.740200

Abstract

A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.

Keywords

THRESHOLD VOLTAGE
PREDICTIVE MODELS
MOSFET CIRCUITS
SEMICONDUCTOR DEVICE MODELING
SEMICONDUCTOR PROCESS MODELING
INTEGRATED CIRCUIT MODELING
CHEMICAL TECHNOLOGY
DOPING
EQUATIONS
SURFACE FITTING

This publication has 1 reference indexed in Scilit:

Threshold voltage model for deep-submicrometer MOSFETs
IEEE Transactions on Electron Devices, 1993