Resistivity of ion beam synthesised CoSi 2
- 26 October 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (22) , 1532-1533
- https://doi.org/10.1049/el:19891030
Abstract
Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between 900 and 2300 A. The silicide layers were highly conducting with some sheet resistivities below 1Ω/ corresponding to resistivities of 10–15 μΩcm/□.Keywords
This publication has 2 references indexed in Scilit:
- Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and AnnealingMRS Proceedings, 1989
- Fabrication of High Quality Silicide Layers by Ion ImplantationMRS Proceedings, 1989