Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
- 1 June 2001
- journal article
- Published by Elsevier in Optical Materials
- Vol. 17 (1-2) , 263-266
- https://doi.org/10.1016/s0925-3467(01)00089-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- 1.3-μm GaInNAs-AlGaAs distributed feedback lasersIEEE Photonics Technology Letters, 2000
- Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor depositionApplied Physics Letters, 1999
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasersIEEE Photonics Technology Letters, 1999
- Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levelsApplied Physics Letters, 1998
- Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasersApplied Physics Letters, 1993
- Reduction in the series resistance of the distributed Bragg reflector in vertical cavities by using quasi-graded superlattices at the heterointerfacesJournal of Applied Physics, 1993