Current Status of 200 mm and 300 mm Silicon Wafers
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S)
- https://doi.org/10.1143/jjap.37.1210
Abstract
Encouraging characterization data for 300 mm polished developmental wafers has been obtained, indicating individual parameter data in some cases comparable to or even exceeding state-of-the-art 200 mm epitaxial wafers. Initial oxygen precipitation data in 300 mm sectioned wafers indicates behavior consistent with previously observed phenomenon. Nevertheless, extensive work is required for further clarification and detailed comparison to 200 mm behavior.Keywords
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