High field emission related thin oxide wearout and breakdown
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A model describing high voltage induced thin oxide wearout and breakdown in terms of traps generated inside of the oxide by high field emission has been developed. This model has been shown to be able to describe much of the thickness, field, polarity, time and temperature dependences observed during thin oxide wearout and breakdown.Keywords
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