Relaxation phenomena in evaporated amorphous silicon films
- 1 October 1989
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 4 (5) , 1057-1059
- https://doi.org/10.1557/jmr.1989.1057
Abstract
Power compensated differential scanning calorimetry, transmission electron microscopy, and density measurements were used to characterize relaxation phenomena associated with structural transitions in electron beam evaporated amorphous silicon thin films. Two transitions were observed in the amorphous films upon heating: a broad exothermic process below 600 K and an endothermic step beginning at 600 K. The broad exothermic process is due to the relief of bond distortions. The endothermic step is related to homogenization and densification of the structure of the amorphous silicon.Keywords
This publication has 11 references indexed in Scilit:
- The effect of preparation conditions on the morphology of low-temperature silicon filmsJournal of Non-Crystalline Solids, 1988
- Structure and existence of the first sharp diffraction peak in amorphous germanium prepared in UHV and measured in-situJournal of Non-Crystalline Solids, 1988
- Reaction kinetics of nickel/silicon multilayer filmsApplied Physics Letters, 1988
- Transient structural relaxation of amorphous siliconJournal of Non-Crystalline Solids, 1988
- Intermediate range order in elemental amorphous and liquid semiconductorsJournal of Non-Crystalline Solids, 1987
- Medium range order in amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1987
- Structural order and dynamics of amorphous Si and GeJournal of Non-Crystalline Solids, 1987
- Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scatteringSolid State Communications, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981