Introduction of defect clusters in GaAs by high-energy γ-rays
- 16 November 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (1) , 387-393
- https://doi.org/10.1002/pssa.2210560144
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Removal and scattering of charge carriers by defect clusters in semiconductorsPhysica Status Solidi (a), 1978
- Introduction and annealing of defects inn-type gaas following irradiation with electrons and gamma raysRadiation Effects, 1978
- Annealing of Electron-Irradiated GaAsPhysical Review B, 1962