Effects of O3 on Growth and Electrical Properties of Pb(Zr, Ti)O3 Thin Films by Photoenhanced Metalorganic Chemical Vapor Deposition

Publisher Website
Google Scholar
Abstract
Effects of O3 on the growth and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using O3 at substrate temperatures ranging from 560° C to 625° C. The crystalline orientation, growth rate and growth temperature were not appreciably influenced by the use of O3 and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O3 and photoirradiation was observed. From scanning electron microscope (SEM) observations, it was found that this improvement may be caused by the microscopic change in film structure.