Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO2
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11S) , 3219-3222
- https://doi.org/10.1143/jjap.30.3219
Abstract
Intense vacuum ultraviolet laser radiation is generated from rare gas excimer lasers. 9.8 eV photons from an argon excimer laser change surfaces of SiO2 to silicon. The reaction proceeds without the aid of reactive gas or solution and is thus called the “superdry process”. 9.8 eV photons create excitons via an efficient one-photon absorption process, and then these high-density excitons induce bond-breaking between Si and O.Keywords
This publication has 7 references indexed in Scilit:
- High-power operation of an argon excimer laser with a MgF/sub 2/ and SiC cavityIEEE Journal of Quantum Electronics, 1991
- Photostimulated evaporation of SiO2 films by synchrotron radiationApplied Physics Letters, 1990
- Super-polished silicon carbide mirror for high-power operation of excimer lasers in a vacuum ultraviolet spectral rangeReview of Scientific Instruments, 1990
- High-power narrow-band operation and Raman frequency conversion of an electron-beam pumped krypton excimer laserIEEE Journal of Quantum Electronics, 1988
- High-efficiency, energy-scalable, coherent 130-nm source by four-wave mixing in Hg vaporOptics Letters, 1988
- Tunable VUV Generation by Anti-Stokes Stimulated Raman Conversion of XeCl Laser RadiationJapanese Journal of Applied Physics, 1987
- Electronic excitation mechanism of sputtering and track formation by energetic ions in the electronic stopping regimeNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986