Photostimulated evaporation of SiO2 films by synchrotron radiation
- 26 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (22) , 2302-2304
- https://doi.org/10.1063/1.104167
Abstract
Irradiation by synchrotron radiation on SiO2 films induces continuous removal of this material at elevated temperatures. The photostimulated evaporation rate for a thermally grown SiO2 film increases steeply with temperature giving an activation energy of 0.7 eV. The experimental results indicate that photon‐induced bond breaking assists decomposition and thermal desorption of the film. Applications to microfabrication of a line‐and‐space pattern and low‐temperature cleaning of Si(100) surface are demonstrated.Keywords
This publication has 10 references indexed in Scilit:
- Synchrotron-radiation-stimulated desorption of O+ ions from an oxidized silicon surfaceApplied Physics Letters, 1990
- Synchrotron radiation stimulated semiconductor processes: Chemical vapor deposition and etchingReview of Scientific Instruments, 1989
- Synchrotron radiation-excited chemical-vapor deposition and etchingJournal of Vacuum Science & Technology B, 1987
- Synchrotron Radiation-Assisted Etching of Silicon SurfaceJapanese Journal of Applied Physics, 1987
- Synchrotron radiation-induced etching of a carbon film in an oxygen gasApplied Physics Letters, 1987
- Synchrotron radiation-excited chemical vapor deposition of SixNyHz filmJournal of Applied Physics, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Electronic excitation mechanism of sputtering and track formation by energetic ions in the electronic stopping regimeNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Laser sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Photon-Induced Oxygen Loss in Thin SiFilmsPhysical Review Letters, 1984