Synchrotron Radiation-Assisted Etching of Silicon Surface
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A) , L1110
- https://doi.org/10.1143/jjap.26.l1110
Abstract
The photo-assisted etching of heavily phosphorous-doped polycrystalline silicon by chlorine was studied using synchrotron radiation as an extreme ultraviolet (EUV) light source. The quantum yield for the removal of the Si atoms at a chlorine pressure of 0.3 Torr was found to be about 0.5% photon-1 using the Ti-filtered light, which is mostly in the EUV region, 1-20 nm. Formation of electronically excited Cl+ ions upon EUV irradiation was confirmed by emission spectroscopy. Negative bias applied to the Si crystal was found to increase the etch rate.Keywords
This publication has 8 references indexed in Scilit:
- Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave dischargeApplied Physics Letters, 1986
- Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl2 AtmosphereJapanese Journal of Applied Physics, 1985
- Non-thermal effects in laser-enchanced etching of silicon by XeF2Chemical Physics Letters, 1983
- Laser-induced gas-surface interactionsSurface Science Reports, 1983
- The Chemical Physics of SurfacesPublished by Springer Nature ,1977
- Absorption by Some Molecular Gases in the Extreme UltravioletPhysical Review A, 1972
- Photoabsorption near theEdge of Silicon and AluminumPhysical Review B, 1970
- Optical absorption measurements of the transition metals Ti, V, Cr, Mn, Fe, Co, Ni in the region of 3p electron transitionsSolid State Communications, 1969