Ultrafast all-optical switching at 1.3µm/1.55 µm using novelInGaAs/AlAsSb/InP coupled double quantum well structure forintersubband transitions
- 24 June 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (13) , 1103-1105
- https://doi.org/10.1049/el:19990733
Abstract
A coupled double quantum well (C-DQW) structure enabling ultrafast, multiwavelength, all-optical modulation using intersubband transitions is proposed. It has been demonstrated by calculating the absorption and relaxation characteristics that the InGaAs/AlAsSb C-DQW structure is desirable for application in all-optical switches for multiwavelength operation at near-infrared wavelengths down to 1.3 µm. The capability of ultrafast all-optical switching/wavelength conversion between 1.3 and 1.55 µm has also been demonstrated.Keywords
This publication has 5 references indexed in Scilit:
- Enhancement of the quantum confined Stark effect and tunneling carrier sweep- out in GaAs/AIGaAs mulPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Intersubband transitions in InGaAs/AlAs coupleddouble quantum wellstructures for multi-wavelength all-optical switchingElectronics Letters, 1998
- Near-infrared wavelength intersubband transitionsin high indium content InGaAs/AlAs quantum wells grown on GaAsElectronics Letters, 1997
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs SubstrateJapanese Journal of Applied Physics, 1996
- Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wellsApplied Physics Letters, 1994