Alloy scattering in p-type AlxGa1−xAs
- 1 January 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (1) , 260-266
- https://doi.org/10.1063/1.350752
Abstract
The hole mobility of Be‐doped ( ∼ 2 × 1017 cm−3) AlxGa1−xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p‐type AlxGa1−xAs.This publication has 7 references indexed in Scilit:
- Scattering rates for holes near the valence-band edge in semiconductorsJournal of Applied Physics, 1990
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Ionized-impurity scattering in the weak-screening limitPhysical Review B, 1985
- Alloy scattering potential in p-type Ga1−xAlxAsJournal of Applied Physics, 1983
- Hall effect studies in germanium doped AlxGa1−xAsJournal of Applied Physics, 1983
- Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxyJournal of Applied Physics, 1980
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973