The optimization of InxGa1−xAs and InP growth conditions by CBE
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 594-598
- https://doi.org/10.1016/0022-0248(91)91046-d
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InGaAs MOMBE — system drift and material qualityJournal of Crystal Growth, 1991
- The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxyJournal of Applied Physics, 1990
- The Effect of PH 3 Pyrolysis on the Morphology and Growth Rate of InP Grown by Hydride Vapor Phase EpitaxyJournal of the Electrochemical Society, 1987