Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- A room temperature 0.1 μm CMOS on SOIIEEE Transactions on Electron Devices, 1994
- Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologiesMicroelectronic Engineering, 1991