Preparation and characterization of gallium(III) fluoride thin films
- 1 June 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 173 (2) , 243-252
- https://doi.org/10.1016/0040-6090(89)90140-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Physico-chemical characterization of thin films obtained by fluorination of GaAs under 5 bar of fluorineThin Solid Films, 1989
- Caractérisation physico-chimique et électrique de structures fluorure — semi-conducteur III-V (passivation de GaAs et InP)Revue de Physique Appliquée, 1988
- Impurity Conduction along the Least Resistance Paths of Granular Insulating Thin FilmsPhysica Status Solidi (b), 1984
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979