Structural and Electrical Characterization of SrTiO3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4069-4073
- https://doi.org/10.1143/jjap.32.4069
Abstract
SrTiO3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM)2/Ti(i-OC3H7)4/O2/Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO3 films, and leakage current densities were 6×10-8 A/cm2 at 1.0 V and 5×10-7 A/cm2 at 1.65 V. The structural and electrical properties were affected by the film composition.Keywords
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