On some factors limiting depth resolution during SIMS profiling
- 1 April 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 67 (1-4) , 495-499
- https://doi.org/10.1016/0168-583x(92)95859-p
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- A phenomenological model for low-temperature ion mixing in dilute systemsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- SIMS profile simulation using delta function distributionsSurface and Interface Analysis, 1991
- Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profilingSurface and Interface Analysis, 1990
- Thermodynamic and fractal geometric aspects of ion-solid interactionsMaterials Science Reports, 1990
- Ion-beam-induced SbSi mixingThin Solid Films, 1989
- Reflection of heavy ionsZeitschrift für Physik B Condensed Matter, 1986
- When is thermodynamics relevant to ion-induced atomic rearrangements in metals?Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Sputtering studies with the Monte Carlo Program TRIM.SPApplied Physics A, 1984
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961