Interaction of oxygen and carbon impurities with the multiphonon infrared absorption bands of Silicon at low temperatures
- 31 July 1987
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 27 (4) , 207-213
- https://doi.org/10.1016/0020-0891(87)90054-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Multiphonon infrared absorption in siliconInfrared Physics, 1987
- Theory of lattice-dynamical properties of solids: Application to Si and GePhysical Review B, 1982
- Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In SiliconPublished by SPIE-Intl Soc Optical Eng ,1981
- Quantum mechanical force calculations in solids: The phonon spectrum of SiSolid State Communications, 1981
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- Theory of structural properties of covalent semiconductorsPhysical Review B, 1979
- Calculation of lattice dynamical properties from electronic energies: Application to C, Si and GeSolid State Communications, 1976
- Evidence for Internal Rotation in the Fine Structure of the Infrared Absorption of Oxygen in SiliconThe Journal of Chemical Physics, 1960
- Infrared Absorption in-Type SiliconPhysical Review B, 1957
- Forces in MoleculesPhysical Review B, 1939