In situ detection of rearrangement processes during electron beam annealing of ion implanted InP
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 564-568
- https://doi.org/10.1016/0168-583x(93)96182-c
Abstract
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This publication has 1 reference indexed in Scilit:
- Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAsInternational Journal of Electronics, 1989