Short channel effects in submicron self-aligned gate heterostructure field effect transistors
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 696-699
- https://doi.org/10.1109/iedm.1988.32908
Abstract
AlGaAs/GaAs self-aligned gate heterostructure FETs with gate lengths varying from 0.3 to 1.5 mu m were fabricated to study short-channel effects. Peak extrinsic transconductance as high as 360 mS/mm was achieved with this process. Short-channel effects such as increases in the output conductance, increases in the subthreshold current, and shifts in the threshold voltage are reported for temperatures ranging from 30 degrees C to 100 degrees C. The observations follow closely predictions from a simple model which attributes the effects to space-charge-limited electron injection into the GaAs buffer layer beneath the actual two-dimensional electron gas channel.<>Keywords
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