Radiation damage effects from 2 MeV protons in silicon surface barrier detectors
- 15 May 1972
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 101 (1) , 97-105
- https://doi.org/10.1016/0029-554x(72)90763-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Hot electron studies of lattice damage created in silicon by implantation of 2.8 MeV protonsRadiation Effects, 1970
- Low Energy Proton Irradiation of Silicon Surface Barrier DetectorsIEEE Transactions on Nuclear Science, 1970
- OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICONApplied Physics Letters, 1969
- Low-Energy Proton Damage Effects in Silicon Surface-Barrier DetectorsIEEE Transactions on Nuclear Science, 1968
- Radiation Damage by Charged Particles in Silicon Junction DetectorsIEEE Transactions on Nuclear Science, 1963
- Low-Temperature Annealing Studies in GeJournal of Applied Physics, 1959
- Temperature-Dependent Defect Production in Bombardment of SemiconductorsPhysical Review B, 1959