Resonant resistance enhancement in double-quantum-well GaAs-As heterostructures
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11) , 8024-8027
- https://doi.org/10.1103/physrevb.50.8024
Abstract
We present a study of electron transport in coupled quantum-well structures controlled by both front and back gates. The resonant resistance enhancement is systematically investigated by varying the mobility in each quantum well. We show that a large mobility ratio between the two wells gives a large resonant resistance enhancement only when the level broadening is smaller than the symmetric-antisymmetric gap of the coupled system.Keywords
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