Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs Heterojunctions

It is shown for the first time that the controlled deformation of the electron wave function leads to modulation of the two-dimensional electron mobility by as much as 56% even when the electron concentration is kept constant. The deformation is controlled by use of two different gating modes (front gating and back gating) in a novel $n$-AlGaAs-GaAs heterojunction field-effect-transistor configuration. The observed modulation of electron mobility is in accordance with the theoretical prediction and demonstrates the feasibility of the recently proposed concept of a velocity-modulation transistor.