Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
- 20 November 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (21) , 3391-3393
- https://doi.org/10.1063/1.1328091
Abstract
No abstract availableKeywords
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