Dynamics of Nd : YAG laser annealing of silicon on sapphire
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (11) , 873-875
- https://doi.org/10.1063/1.90989
Abstract
Epitaxial and polycrystalline silicon layers on sapphire have been annealed with Q‐switch pulses from a Nd : YAG laser irradiated on the Si surface. Time‐resolved optical reflectivity measurements have been performed. The annealing process is shown to be induced by melting and subsequent epitaxial regrowth. The best results were obtained if the whole Si layer was melted, thus allowing the (11̄02) oriented sapphire substrate to act as a seed for recrystallization. In this case commercially available Si‐on‐sapphire (SOS) wafers with additional Si implantation as well as polycrystalline layers of low‐pressure chemical vapor deposited (LPCVD) Si on sapphire could be epitaxially regrown. The same material deposited on amorphous SiO2 did not show epitaxial regrowth, however an increase in size of randomly orientated grains from 60 nm to 1 μm could be achieved.Keywords
This publication has 7 references indexed in Scilit:
- Laser annealing of silicon on sapphireJournal of Applied Physics, 1979
- Dynamics of Q-switched laser annealingApplied Physics Letters, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layersApplied Physics Letters, 1979
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979
- Anisotropic melting and epitaxial regrowth of laser-irradiated siliconApplied Physics Letters, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978