Spontaneous self-embedding of three-dimensional SiGe islands
- 20 January 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 567-569
- https://doi.org/10.1063/1.123147
Abstract
It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may be more generally useful for preserving the shape of self-assembled “quantum dot” islands during embedding in a matrix material.Keywords
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