Analysis of Photoemissive Schottky Barrier Photodetectors
- 1 May 1971
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (6) , 2280-2284
- https://doi.org/10.1063/1.1660537
Abstract
The performance of Schottky barrier photodetectors employing internal photoemission process is studied. Background‐photon‐noise limited detectivities Dλ* have been calculated for typical operating conditions. The use of cooled optical filters has also been investigated. The analysis shows that the detectivities may be considerably less (by about an order of magnitude) than those realized for the more conventional quantum detectors employing photovoltaic or photoconductive effects.This publication has 4 references indexed in Scilit:
- Simple Model for Internal PhotoemissionJournal of Applied Physics, 1971
- Effects of pre- and post-annealing treatments on silicon Schottky barrier diodesProceedings of the IEEE, 1970
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966