The diffusion of Cl into CdTe
- 12 September 1994
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 6 (37) , 7499-7504
- https://doi.org/10.1088/0953-8984/6/37/005
Abstract
Results on the diffusion of Cl into CdTe are described. Diffusion anneals were carried out at selected temperatures in the range between 200 degrees C and 700 degrees C in evacuated SiO2 ampoules using a diffusion source of CdCl2 under saturated vapour pressure conditions. The concentration profiles were measured using a radiotracer sectioning technique. The profiles were found to be composed of four parts, to which a computer package consisting of the sum of four complementary error functions (erfc) gave satisfactory fits to the data. The fastest-diffusing component gave values of the diffusivity that agreed with previously published results. Proposals explaining how this type of diffusion may occur are given.Keywords
This publication has 4 references indexed in Scilit:
- Use of anodic oxidation as a sectioning technique for diffusion measurements in cadmium tellurideJournal of Materials Science: Materials in Electronics, 1992
- Evaluation of CdTe(Cl) crystal growth with THM and application to a multichannel detectorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- MOVPE growth and characterization of doped CdxHg1-xTe structuresSemiconductor Science and Technology, 1991
- The solubility and diffusivity of In in CdTeJournal of Physics C: Solid State Physics, 1983