A Novel Thin Al 2 O 3 Gate Dielectric by ECR‐Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field‐Effect Transistors
Open Access
- 19 December 2002
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 1,p. 90-94
- https://doi.org/10.1002/pssc.200390124
Abstract
No abstract availableKeywords
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