Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors
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- 22 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (17) , 2832-2834
- https://doi.org/10.1063/1.1412591
Abstract
We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse.Keywords
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