STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHzKeywords
This publication has 2 references indexed in Scilit:
- A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantationIEEE Transactions on Electron Devices, 1989
- Emitter resistance and performance tradeoff of submicrometer self-aligned double-polysilicon bipolar devicesIEEE Transactions on Electron Devices, 1988