Plasma-enhanced deposition of amorphous silicon at temperatures between 300 and 500 °C
- 1 January 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 168 (1) , 89-101
- https://doi.org/10.1016/0040-6090(89)90692-5
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Plasma-enhanced growth and composition of silicon oxynitride filmsJournal of Applied Physics, 1986
- Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1985
- High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layersNuclear Instruments and Methods in Physics Research, 1982
- Recent applied developments in the amorphous silicon fieldThin Solid Films, 1982
- Characterization of low-pressure chemical-vapor-deposited and thermally-grown silicon nitride filmsJournal of Applied Physics, 1982
- Review of amorphous and polycrystalline thin film silicon solar cell performance parametersSolar Energy, 1980
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- Plasma preparations of amorphous silicon filmsThin Solid Films, 1978
- Substitutional doping of amorphous siliconSolid State Communications, 1975