Effect of indium replacement by gallium on InAs/GaAs quantized levels
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1) , 195-198
- https://doi.org/10.1016/0039-6028(92)91119-v
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin-layer structuresJournal of Applied Physics, 1991
- Replacement of group-III atoms on the growing surface during migration-enhanced epitaxyJournal of Applied Physics, 1990
- Electronic structure of an InAs monomolecular plane in GaAsPhysical Review B, 1990
- Modulation of quantized levels of GaAs/AlGaAs quantum wells by InAs monomolecular plane insertionApplied Physics Letters, 1990
- Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxySurface Science, 1990
- InAs monomolecular plane in GaAs grown by flow-rate modulation epitaxyJournal of Applied Physics, 1989