Internal stress and degradation in short-wavelength AlGaAs double heterojunction devices

7 June 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (12) , 342-343
https://doi.org/10.1049/el:19790243

Abstract

Aging tests of incoherently operated zinc-doped double-heterojunction(d.h.) lasers designed for short-wavelength (0.71–0.72 μm) operation show that the introduction of buffer layers between the substrate and the d.h. structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

Keywords

LATTICE MISMATCH STRESS REDUCTION
JUNCTION LASERS
DEGRADATION
BUFFER LAYERS
AGEING
INTERNAL STRESS
SHORT WAVELENGTH OPERATION
0.71 TO 0.72 MICRON WAVELENGTH
SEMICONDUCTOR
ZN:ALGAAS DH LASERS

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Introduction
Published by Elsevier ,1977