High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma

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Abstract
Submicron patterning technologies for the PZT/Pt/Ti/TiN/Ti structure with a spin on glass (SOG) mask were demonstrated using a high-density ECR plasma and a high substrate temperature above 300° C. A 30%-Cl2/Ar gas was used to etch a lead zirconate titanate (PZT) film. No deposits remained, which resulted in an etched profile of more than 80°. A 40%-O2/Cl2 gas was used to etch a Pt film. The etching was completely stopped at the Ti layer. 30-nm-thick deposits remained on the sidewall. They were removed after dipping in hydrochloric acid. The etched profile of a Pt film was more than 80°. The Ti/TiN/Ti layer was etched with pure Cl2 gas. The size shift from the SOG mask was less than 0.1 µ m. Interdiffusion between SOG and PZT was not detected by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM-EDX) analysis.