Comparison between matching parameters and fluctuations at the wafer level
- 15 October 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxideIEEE Transactions on Electron Devices, 2000
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994