A hybrid gauss‐newton‐simulated annealing optimizer for extraction of mesfet equivalent circuit elements

Abstract
A new optimizer is presented for the extraction of the small‐signal equivalent circuit elements (X) of a CaAs FET from its measured scattering (S) parameters. The approach is a combination of the damped Gauss‐Newton method, for the least‐squares fitting of the S parameters, and the random search generalized simulated annealing (GSA). Novel features of the proposed approach include (i) an improved Kondoh step‐by‐step optimization of the objective functions grouped according to their sensitivity to variation of key equivalent circuit parameters (X), and (ii) exploitation of the advantages derived from a transformation of the objective functions from scattering parameters to impedance parameters. © 1993 John Wiley & Sons, Inc.

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