Metastability in SiGe/Si Strained-Layer Structures
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988
- Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocationsApplied Physics Letters, 1988
- Thin film growth modes, wetting and cluster nucleationSurface Science, 1988
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxyApplied Physics Letters, 1987
- Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structuresApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- Impurity clustering effects on dislocation generation in siliconDiscussions of the Faraday Society, 1964
- One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949