Reduction of gate current in AlSb/InAs HEMTs usinga dual-gate design
- 15 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (17) , 1624-1625
- https://doi.org/10.1049/el:19961088
Abstract
Dual-gate AlSb/InAs HEMTs with 0.4 µm gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices.Keywords
This publication has 2 references indexed in Scilit:
- AlSb/InAs HEMTs with high transconductance and negligiblekink effectElectronics Letters, 1996
- 0.2 µm AlSb/InAs HEMTs with 5 V gate breakdownvoltageElectronics Letters, 1994