MOVPE of ZnSe using organometallic allyl selenium precursors
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 390-395
- https://doi.org/10.1016/0022-0248(91)90492-n
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of carbon incorporation in znse: Effects on morphology, electrical, and photoluminescence propertiesJournal of Electronic Materials, 1990
- High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristicsApplied Physics Letters, 1989
- An examination of organometallic thermal stability and its relevance to low-temperature MOCVD growth of HgCdTeJournal of Materials Research, 1988
- Metalorganic growth of HgTe and CdTe at low temperatures using diallyltellurideJournal of Applied Physics, 1987
- Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkylsJournal of Crystal Growth, 1986
- Recent developments in the MOVPE of II–VI compoundsJournal of Crystal Growth, 1985
- GAS-PHASE THERMOLYSIS OF SULFUR COMPOUNDS. PART V. METHYL ALLYL, DIALLYL AND BENZYL ALLYL SULFIDESPhosphorus and Sulfur and the Related Elements, 1982
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- Mechanisms of thermolytic fragmentation of allyl ethers. IJournal of the American Chemical Society, 1973