Emitter-collector shorts in bipolar devices
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (4) , 505-510
- https://doi.org/10.1109/jssc.1976.1050767
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Argon Implantation Gettering of Bipolar DevicesJournal of the Electrochemical Society, 1977
- Mapping of electrical leakage in transistors by anodic oxidationIEEE Transactions on Electron Devices, 1972
- The influence of stationary dislocations and stacking faults on some transistor parametersSolid-State Electronics, 1971
- Influence of dislocations on properties of shallow diffused transistorsIEEE Transactions on Electron Devices, 1969
- Diffusion Pipes in Silicon NPN StructuresJournal of the Electrochemical Society, 1969
- Process-Introduced Structural Defects and Junction Characteristics in N P N Silicon Epitaxial Planar TransistorsJournal of Applied Physics, 1965
- Properties of Twin Boundaries in SiliconJournal of the Electrochemical Society, 1963
- Cross Sections and Ohmic Resistance of Diffusion Pipes in SiliconJournal of the Electrochemical Society, 1962
- Diffusion along Small-Angle Grain Boundaries in SiliconPhysical Review B, 1961
- Metal Precipitates in Silicon p-n JunctionsJournal of Applied Physics, 1960