Gate oxide charge-to-breakdown correlation to MOSFET hot-electron degradation
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (4) , 183-185
- https://doi.org/10.1109/55.683
Abstract
Substrate current by itself is found not to be a sufficient indicator of degradation. Experiments using active-area test capacitors with and without poly edges confirm that the gate-oxide trap density beneath the poly edges is equally important in determining the degradation. Certain processing steps have been identified as being responsible for gate-oxide degradation. An optimization of these steps has resulted in improved hot-electron degradation behavior.Keywords
This publication has 10 references indexed in Scilit:
- Effect of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1987
- Effect of P-SiN Passivation Layer on Time-Dependent Dielectric Breakdown in SiO2Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Time-dependent dielectric breakdown of ultra-thin silicon oxideIEEE Electron Device Letters, 1987
- Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2Journal of the Electrochemical Society, 1986
- Lifetimes and substrate currents in static and dynamic hot-carrier degradationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Reliability effects on MOS transistors due to hot-carrier injectionIEEE Transactions on Electron Devices, 1985
- Hot-electron substrate-current generation during switching transientsIEEE Transactions on Electron Devices, 1985
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- On physical models for gate oxide breakdownIEEE Electron Device Letters, 1984
- An empirical model for device degradation due to hot-carrier injectionIEEE Electron Device Letters, 1983