Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1235-1239
- https://doi.org/10.1016/0038-1101(89)90220-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Self-consistent study of the resonant-tunneling diodePhysical Review B, 1989
- Quantum transport modeling of resonant-tunneling devicesSolid-State Electronics, 1988
- Wigner-function model of a resonant-tunneling semiconductor devicePhysical Review B, 1987
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974