LPE Lateral Overgrowth of GaP
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3R)
- https://doi.org/10.1143/jjap.29.545
Abstract
Epitaxial lateral overgrowth (ELO) of GaP on SiO2-coated (111)B or (111)A GaP substrates was carried out successfully by LPE. It was found that the ELO of GaP showed dependency on seed orientation similar to that of GaAs. However, a pronounced asymmetry of lateral growth in [2̄11] and [21̄1̄] orientations was found. Monomolecular growth steps on the ELO layer have been observed by a Nomarski differential interference contrast microscope equipped with an image processor without decoration. Nitrogen doping was performed, and its nonuniform distribution was investigated by a fluorescence microscope and spatially resolved photoluminescence. From the nonuniformity, an understanding of the ELO mechanism was derived. It was found that the epilayer had a much lower dislocation density than that in a substrate. It was concluded that wide and extremely flat GaP epilayers with high quality can be obtained by the ELO technique.Keywords
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