Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture
- 1 April 2000
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (4-5) , 613-616
- https://doi.org/10.1016/s0026-2714(99)00288-7
Abstract
No abstract availableKeywords
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- Electrical and Structural Properties of Ultrathin SiO2 Gate Dielectrics Prepared Under Various ConditionsJournal of the Electrochemical Society, 1992
- Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD techniqueElectronics Letters, 1990