Determination of the minority carrier diffusion length in silicon solar cells
- 1 May 1979
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 46 (5) , 529-533
- https://doi.org/10.1080/00207217908901037
Abstract
Minority carrier diffusion length in the base region of silicon solar cells, fabricated by a diffused junction technique and having a resistivity in the range 0.1–1OΩcm. has been measured by studying the spectral dependence of the shortcircuit current density. The trend of the observed variation of minority carrier diffusion length and lifetime with the doping level of base region is discussed.Keywords
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