Epitaxial Growth of Pb0.918Sn0.082Se Films on CaF2 and BaF2 Substrates
- 1 March 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (3) , 1313-1316
- https://doi.org/10.1063/1.1661272
Abstract
Single‐crystal (111) Pb0.918Sn0.082Se films have been deposited on cleaved (111) BaF2 substrates by both the flash and the one‐boat evaporation methods. On cleaved (111) CaF2 substrates, single‐crystal (111) films were obtained only when one‐boat evaporation was used. At 87°K, mobilities up to 1.3×104 cm2/V sec have been obtained.This publication has 11 references indexed in Scilit:
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