DLTS Investigations of Si–SiO2 Interface States of Electron-Beam Irradiated MOS Structures
- 1 August 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 118 (2) , K133-K136
- https://doi.org/10.1002/pssb.2221180257
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Measurement of semiconductor–insulator interface states by constant-capacitance deep-level transient spectroscopyJournal of Vacuum Science and Technology, 1982
- Change of interface state spectrum in Al/SiO2/Si structures with biasing during electron irradiationApplied Physics Letters, 1982
- Generation of interface states in MOS systemsThin Solid Films, 1982
- Material and device research for VLSI in JapanJournal of Vacuum Science and Technology, 1981
- Intimate valence alternation pairs in amorphous SiO2Journal of Non-Crystalline Solids, 1980
- TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACEPublished by Elsevier ,1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974